Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With contact or metallization configuration to reduce...
Patent
1990-10-30
1993-06-22
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With contact or metallization configuration to reduce...
257548, H01L 2934
Patent
active
052218554
ABSTRACT:
A monolithic vertical-type semiconductor power device comprises an N+ type substrate 1 over which there is superimposed an N- type epitaxial layer 2 in which there is obtained a P type isolation pocket 3. The pocket 3 contains N type regions 4, 15 and P type regions 6 which in turn contain N+ type regions 11, 12 and P type regions 7, 9, 10 which define circuit components of the device. Isolation pocket 3 is wholly covered by a first metallisation 21 connect to ground. The metallisation 21 is in turn protected by a layer of insulating material 18 suitable for allowing the crossing of metal tracks or of a second metallisation for the connection of the different components.
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Ferla Giuseppe
Palara Sergio
Crane Sara W.
James Andrew J.
SGS--Thomson Microelectronics S.r.l.
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