Monolithic temperature compensated voltage-reference diode and m

Details Monolithic temperature compensated voltage-reference diode and m Monolithic temperature compensated voltage-reference diode and m

1989-07-03

1989-12-12

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 74, 437 78, 437 90, 148DIG174, H01L 300, H01L 500, H01L 2990

Patent

active

048867624

ABSTRACT:
An improved monolithic, temperature compensated voltage- reference diode is realized by creating a tub of epitaxial semiconductor material in a substrate of opposite conductivity type and creating a voltage reference junction at a surface of the tub. The junction between the tub and the substrate forms the forward-biased, temperature compensating junction of the device. The dopant concentration is varied during growth of the epitaxial material to provide a relatively low resistivity at the voltage-reference junction and a higher resistivity at the temperature compensating junction. The method described offers significant improvement over prior methods of manufacturing such devices in the area of cost and reliability.

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IBM Tech. Disc. Bull., vol. 29, no. 10 (Mar. 1987), pp. 4308-4309.

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