Patent
1985-08-06
1989-09-26
Hille, Rolf
357 28, 357 90, 357 33, H01L 2990, H01L 2966, H01L 2900
Patent
active
048704679
ABSTRACT:
An improved monolithic, temperature compensated voltage-reference diode is realized by creating a tub of epitaxial semiconductor material in a substrate of opposite conductivity type and creating a voltage reference junction at a surface of the tub. The junction between the tub and the substrate forms the forward-biased, temperature compensating junction of the device. The dopant concentration is varied during growth of the epitaxial material to provide a relatively low resistivity at the voltage-reference junction and a higher resistivity at the temperature compensating junction. The method described offers significant improvement over prior methods of manufacturing such devices in the area of cost and reliability.
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Boland Bernard W.
Gandy, Jr. William E.
Jackson Kevin B.
Handy Robert M.
Hille Rolf
Limanek Robert P.
Meyer Jonathan P.
Motorola Inc.
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