Monolithic temperature compensated voltage-reference diode and m

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357 28, 357 90, 357 33, H01L 2990, H01L 2966, H01L 2900

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active

048704679

ABSTRACT:
An improved monolithic, temperature compensated voltage-reference diode is realized by creating a tub of epitaxial semiconductor material in a substrate of opposite conductivity type and creating a voltage reference junction at a surface of the tub. The junction between the tub and the substrate forms the forward-biased, temperature compensating junction of the device. The dopant concentration is varied during growth of the epitaxial material to provide a relatively low resistivity at the voltage-reference junction and a higher resistivity at the temperature compensating junction. The method described offers significant improvement over prior methods of manufacturing such devices in the area of cost and reliability.

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Sze, S. M., "Physics of Semiconductor Devices" 2nd Ed., (N.Y., Wiley and Sons) p. 32.

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