Monolithic structure comprising two sets of bidirectional protec

Details Monolithic structure comprising two sets of bidirectional protec Monolithic structure comprising two sets of bidirectional protec

1992-02-11

1994-03-08

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

With specified shape of pn junction

257355, 257362, H01L 2906

Patent

active

052930637

ABSTRACT:
A monolithic structure comprises two sets of bidirectional diodes having distinct characteristics constituted from a substrate (1) of a first (N.sup.-) conductivity type. First regions (10, 11, 12) of the second conductivity type constitute the first set of diodes between a first metallization (30) coating one of the first regions and second metallizations (31, 32) coating the other first regions. In a well (15) of the second conductivity type, second regions (20, 21, 22) of the first conductivity type constitute the second set of diodes between a third metallization (40) coating one of the second regions and fourth metallizations (41, 42) coating the other second regions.

REFERENCES:
patent: 4468852 (1984-09-01), Cerofolini
patent: 4574467 (1986-03-01), Halfacre et al.
patent: 4622573 (1986-11-01), Bakeman, Jr. et al.

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