Static information storage and retrieval – Read only systems – With override
Patent
1981-08-19
1983-08-02
Stellar, George G.
Static information storage and retrieval
Read only systems
With override
365104, 365114, 365118, 365184, G11C 1134, G11C 1700
Patent
active
043969968
ABSTRACT:
A monolithic static memory cell has two cross-coupled inverters each comprised of a series connection of a field effect switching transistor and a load element designed as a field effect transistor. The field effect transistors forming the load elements have their channel resistances of different values. A gate insulating layer of one of the load element field effect transistors has its charge state altered, preferably by electron beam writing, so that a change in a threshold voltage of the one transistor results in a change of its channel resistance relative to the channel resistance of the other load element transistor if it was under before the selective altering, or vice-versa.
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Siemens Aktiengesellschaft
Stellar George G.
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