Monolithic single and double sideband mixer apparatus

Telecommunications – Receiver or analog modulated signal frequency converter – Frequency modifying or conversion

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Details

455327, 455328, 455330, H04B 126

Patent

active

045532656

ABSTRACT:
A monolithic mixer which is impedance matched to a fundamental waveguide, utilizes a slot coupler and a coplanar transmission line to apply an RF and local oscillator signal to a Schotty-barrier diode. The dielectric substrate is utilized to create a dielectric surface wave resonance which is utilized by centering a slot coupler with respect thereto, to provide a reactive image termination at the upper sideband and thereby enhance single and double sideband mixer operation. The IF signal which is available at the output of the Schottky-barrier diode is filtered by means of an RF bypass capacitor that is located on the dielectric substrate surface.

REFERENCES:
patent: 3742335 (1973-06-01), Konishi
patent: 3916315 (1975-10-01), Konishi
patent: 4006425 (1977-02-01), Chang et al.
patent: 4215313 (1980-07-01), Chang et al.
patent: 4276655 (1981-06-01), Kraemer et al.
patent: 4411022 (1983-10-01), Clifton et al.
"High Performance Quasi-Optical GaAs Monolithic Mixer at 110 GHz" by Clifton et al., 2/1981.
"Cooled Low Noise GaAs Monolithic Mixers at 110 GHz" by Clifton et al., 6/1981.
Clifton, Brian J., "Schottky Diode Receivers for Operation in the 100-1000 GHz Region," The Radio and Electronic Engineer, vol. 49, No. 718, pp. 333-346, Jul./Aug. 1979.
Clifton et al., "Surface-Oriented Schottky Barrier Diodes for Millimeter and Submillimeter Wave Applications", 1978 International Electron Devices Meeting Digest, IEEE Cat. No. 78 CH1324-3ED, pp. 124-128, Dec. 1978.

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