Monolithic silicon rate-gyro with integrated sensors

Measuring and testing – Speed – velocity – or acceleration – Angular rate using gyroscopic or coriolis effect

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7350412, G01P 904, G01P 1502

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active

054888620

ABSTRACT:
A monolithic single crystal Si rate-gyro consisting of in the preferred embodiment, an outer torsional frame, self resonating with a substantial amplitude, as controlled by a four-terminal piezo torsion sensor, connected to an inner frame by torsional hinges. The inner frame itself is connected to a fixed inner post, by a set of torsion hinges, defining an axis of rotation perpendicular to the first axis. Rotation of the axis of oscillation of the outer body causes the moving mass and the inner frame to tilt and oscillate at the outer frequency due to Coriolis forces, thereby periodically deforming the inner hinges in torsion. These inner hinges are likewise equipped with a four-terminal piezo voltage torsion sensor, giving an indication of the rate of rotation of the sensor. The design allows for good sensitivity, due to the substantial swing of the outer oscillator, its high moment of inertia, excellent Si spring characteristics, and excellent sensitivity of the torsional sensors. Because of the integration of all of parts in silicon and its inherent simplicity, it can be made very inexpensively.

REFERENCES:
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patent: 5016072 (1991-05-01), Greiff
patent: 5203208 (1993-04-01), Bernstein
Pfann, W. G. et al., "Semiconducting Stress Transducers Utilizing the Transverse and Shear Piezoresistance Effects", Journal of Applied Physics, vol. 32, No. 10, Oct. 1961, pp. 2008-2016.
Diem, B. et al., "SOI (SIMOX) as a Substrate for Surface Micromachining of Single Crystalline Silicon Sensors and Actuators", The 7th International Conference on Solid-State Sensors and Actuators, pp. 233-236.
Boxenhorn and Greiff, "Monolithic Silicon Accelerometer", Sensors and Actuators, A21-A23 (1990) 273-277.

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