Monolithic silicon integrated circuit for detecting azimuth...

Radiant energy – Photocells; circuits and apparatus – Photocell controls its own optical systems

Reexamination Certificate

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C250S214100

Reexamination Certificate

active

07145121

ABSTRACT:
A device for detecting radiation direction is an integrated circuit that includes a first and second phototransistor positioned anti-parallel with respect to each other and a reference phototransistor. The device does not require impinging radiation to be mechanically aligned using pinholes, apertures or mechanical slits. The first phototransistor detects the direction of the radiation in an x-plane, and the second phototransistor detects the direction of the radiation in the y-plane. The first and second phototransistors have two differential pairs. The P type base regions are formed in the <111> plane of the silicon to form opposing sidewalls for receiving radiation signals from a radiation source. A current is induced in the PN junction of each phototransistor, thereby causing a current output on the emitters of the phototransistors. The differential currents represent rectangular coordinates describing the direction of the radiation detected on the <111> plane. The reference transistor is a <100> plane phototransistor, and its single current output is used to normalize the differential outputs of the first and second phototransistors. A system that integrates the detection device to determine the azimuth and elevation (spherical coordinates) of the impinging radiation includes a device that translates the normalized current outputs (rectangular coordinates) into spherical coordinates.

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