Monolithic silicon-based photonic receiver

Details Monolithic silicon-based photonic receiver Monolithic silicon-based photonic receiver

2007-08-10

2011-11-22

Shingleton, Michael (Department: 2815)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S257000, C257S431000, C257S462000

Reexamination Certificate

active

08062919

ABSTRACT:
An integrated circuit, and method for manufacturing the integrated circuit, where the integrated circuit can include a phototransistor comprising a base having a SiGe base layer of a predetermined germanium composition and a thickness of more than 65 nm and less than about 90 nm. The integrated circuit can further include a transimpedance amplifier (TIA) receiving an output from the phototransistor. The phototransistor and the TIA can be built on a silicon substrate.

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