Monolithic silicon-based nitride display device

Details Monolithic silicon-based nitride display device Monolithic silicon-based nitride display device

1998-08-19

2000-09-19

Speer, Timothy M.

Stock material or miscellaneous articles

Composite

Of silicon containing

428469, 428472, 428698, 313504, 313506, 257102, 257103, 345 82, 345 83, 362227, 340907, B32B 900

Patent

active

061209090

ABSTRACT:
A color display device which may be used as a gallium nitride (LED) light emitting diode based traffic light is disclosed. Unlike previous large GaN based display devices, which have been built up from numerous small display elements formed on sapphire substrates, the disclosed device preferably uses an entire monolithic silicon wafer as both a substrate and for connection as a whole as a conducting first electrode, a light emitting layered structure of GaN-based materials over the entire monolithic silicon substrate, and a substantially transparent metallic second electrode layer over the layered structure. In order to emit desired traffic light colors (e.g. yellow, red), a color conversion layer is disposed over the transparent metallic electrode layer.

REFERENCES:
patent: 5583351 (1996-12-01), Brown

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