Monolithic semiconductor switching device

Details Monolithic semiconductor switching device Monolithic semiconductor switching device

1983-12-05

1990-05-01

Edlow, Martin H.

357 239, 357 39, 357 48, 357 55, 357 41, H01L 2978

Patent

active

RE0332097

ABSTRACT:
An electrical circuit device made in integrated monolithic form has low level operating characteristics of a MOS device and high level operating characteristics of a Triac. The structure includes two double diffused MOS transistors which have merged drain regions. At higher voltage and current levels a lateral Triac structure is triggered by the MOS devices. Alternatively, separate terminal contacts can be made to the P and N regions comprising the MOS transistor source and channel regions with the Triac triggered conventionally by an externally applied control voltage.

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patent: 3974486 (1976-08-01), Curtis
patent: 3996655 (1976-12-01), Cunningham
patent: 4072975 (1978-02-01), Ishitami
patent: 4119996 (1978-10-01), Jhabrola
patent: 4145703 (1979-03-01), Blanchard

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