Monolithic semiconductor structure of a laser and a field effect

Details Monolithic semiconductor structure of a laser and a field effect Monolithic semiconductor structure of a laser and a field effect

1987-01-05

1988-08-23

James, Andrew J.

Coherent light generators

Particular component circuitry

Optical pumping

357 16, 357 17, 357 4, 357 232, 357 41, 372 50, 372 46, 372 47, H01L 3112, H01L 29761, H01L 3300, H01S 319

Patent

active

047664720

ABSTRACT:
A monolithic semiconductor structure of a laser and a field effect transistor applicable to telecommunications comprises, on a semiinsulating substrate, a semiconductor layer of Ga.sub.1-x Al.sub.x As, a N-doped semiconductor layer of Ga.sub.1-y Al.sub.y As, a semiconductor layer of Ga.sub.1-z Al.sub.z As, in which x and z vary from 0.2 to 0.7 and y from 0 to 0.15 and a GaAs semiconductor layer. In these four layers are formed one type P region and two type N regions, the type P region and one of the type N regions defining between them the active zone of the laser and the two type N regions defining between them the active zone of the transistor, respectively forming the transistor source and drain. The P region of the laser is equipped with an electrode and the transistor source and drain with ohmic contacts. A process for making the structure as also disclosed.

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