Patent
1987-02-04
1989-01-31
James, Andrew J.
357 34, 357 19, 357 16, 357 4, 357 17, 357 55, 357 43, H01L 2702
Patent
active
048019933
ABSTRACT:
This structure comprises a heterostructure formed from first, second and third stacked semiconductor layer, the first and third layers being of N-GaAlAs having a forbidden band width at least equal to that of the materials forming the second layer constituting the active layer of the structure, said second layer being formed from a super-lattice having thin layers of P-GaAs and thin layers of P-GaAlAs in alternating form and oriented parallel to the first and third layers, a N region extending at least from one face to the other of the third layer defining with the latter the PN junction of the laser and means for supplying the laser and transistor with current.
REFERENCES:
patent: 3982207 (1976-09-01), Dingle et al.
"A Monolithic Integration of GaAs/GaAlAs Biblar Transistor and Heterostructure Laser", Katz et al., Appl. Physics Letters, 15 Jul. 80, vol. 37, No. 2, pp. 211-213.
"Fujitsu Refines Method For Semiconductor Lasers", J.E.E. Journal of Electronic Engineering, Sep. 84, vol. 21, No. 213, p. 21.
Bar-Chaim et al., "GaAs Integrated Optoelectronics", IEEE Transactions On Electron Devices, Sep. 1982, vol. ED-29, No. 9, pp. 1372-1381.
Cheney et al., "BIGFET Makes IGFET More Versatile", Bell Lab. Record, Jun./Jul. 1972, vol. 50, No. 6, pp. 194-198.
Ankri David
Palmier Jean-Francois
James Andrew J.
Mintel William A.
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