Monolithic semiconductor pressure sensor, and method of its manu

Details Monolithic semiconductor pressure sensor, and method of its manu Monolithic semiconductor pressure sensor, and method of its manu

1979-04-03

1981-06-23

Larkins, William D.

Electrical resistors

Incased, embedded, or housed

Element in insulation with outer metallic sheath

338 4, 357 41, 357 55, 357 60, H01L 2720

Patent

active

042754062

ABSTRACT:
To provide a pressure sensor with good reproducibility, a cavern of elliptical outline is etched into a highly conductive monocrystalline n.sup.+ doped silicon chip, leaving a thin membrane of an epitaxial layer of elliptical outline, in which the ratio of the elliptical axes is about 2:1 and the elliptical axes extend at an angle of 45.degree. with respect to the (100) and (010) crystal axes; a resistance bridge, which may be formed by boron diffusion or ion implantation, or by transistor integrated circuit technology, is applied to the center of the membrane, having its resistance or transistor, for example FET transistor, branches arranged at the 45.degree. angle with respect to said crystal axes. Etching can be carried out electrochemically in a bath of diluted hydrofluoric acid, utilizing the differential conductivity between the epitaxial layer and an unmasked portion of the doped silicon to leave a membrane of the epitaxial layer; or by chemical etching in a bath of hydrofluoric acid, nitric acid, and acetic acid.

REFERENCES:
patent: 3758830 (1973-09-01), Jackson
patent: 3761784 (1973-09-01), Jund
patent: 3893228 (1975-07-01), George et al.
patent: 4125820 (1978-11-01), Marshall
patent: 4131524 (1978-12-01), Gieles
patent: 4204185 (1980-05-01), Kurtz et al.

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