Monolithic semiconductor laser array of radially disposed lasers

Coherent light generators – Particular active media – Semiconductor

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372 75, 257 88, 257 98, H01S 319

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active

056423730

ABSTRACT:
A monolithic semiconductor laser array includes an insulating substrate, a plurality of semiconductor layers epitaxially grown on the substrate and forming a laser structure, and at least one groove transverse to the substrate extending through the semiconductor layers into the substrate, dividing the semiconductor laser structure into at least two mutually isolated parts. Within each of the isolated parts of the semiconductor laser structure, a first groove includes a side wall transverse to the substrate and forming a first resonator facet of a semiconductor laser. A second groove in each of the parts includes a second side wall transverse to the substrate and opposite the first side wall, forming a second resonator facet of the semiconductor laser in that part. Each second groove also includes a third side wall oblique to the substrate and opposite the second side wall for reflecting light from the respective semiconductor laser so that light from each of the semiconductor lasers is emitted along a common axis transverse to the substrate. The second grooves are arranged radially about a common point on the substrate. The semiconductor lasers may be electrically connected in series to each other.

REFERENCES:
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patent: 4881237 (1989-11-01), Donnelly
patent: 5001719 (1991-03-01), Trussell
patent: 5012477 (1991-04-01), Mesquida et al.
patent: 5365533 (1994-11-01), Groussin
patent: 5373173 (1994-12-01), Ohata et al.
Strite et al., "Progress and Prospects for GaN and the III-V Nitride Semiconductors", Thin Solid Films, vol. 231, pp. 197-210 (no publication month available) 1993.

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