Monolithic semiconductor integrated circuit ferroelectric memory

Details Monolithic semiconductor integrated circuit ferroelectric memory Monolithic semiconductor integrated circuit ferroelectric memory

1980-03-24

1987-11-24

Larson, Lowell A.

Metal working

Electric condenser making

Solid dielectric type

H01G 0700

Patent

active

047078979

ABSTRACT:
A monolithic semiconductor integrated circuit-ferroelectric device is disclosed together with the method of manufacturing same. The ferrelectric device preferably consists of a layer of stable ferroelectric potassium nitrate disposed between electrical contacts positioned on opposite surfaces of the ferroelectric layer. The ferroelectric layer has a thickness of less than 110 microns, and preferably falling within a range of from 100 Angstrom units to 5,000 Angstrom units. The process of manufacturing the monolithic structure is multi-stepped and is particularly adapted for fabricating a potassium nitrate ferroelectric memory on a semiconductor integrated circuit.

REFERENCES:
patent: 4149301 (1979-04-01), Cook
patent: 4149302 (1979-04-01), Cook
patent: 4195355 (1980-03-01), Rohrer
Pulvari and Srour, A New Graded Electrode for Forming Intimate Contact with Ferroelectrics, IEEE Transactions on Electron Devices, vol. ED-16, No. 6, No. 6, Jun. 1969, pp. 532-535.

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