Monolithic semiconductor integrated circuit ferroelectric memory

Details Monolithic semiconductor integrated circuit ferroelectric memory Monolithic semiconductor integrated circuit ferroelectric memory

1978-06-08

1979-04-17

Larson, Lowell A.

Metal working

Electric condenser making

Solid dielectric type

29604, 29628, 357 51, H01G 700

Patent

active

041493028

ABSTRACT:
An improved monolithic semiconductor integrated circuit-ferroelectric device is disclosed together with the method of manufacturing the same. It was found that the preferred ferroelectric material, namely Phase III potassium nitrate, is extremely sensitive to moisture requiring unique processing steps to fabricate the structure. The process of manfacturing the monolithic structure is multi-stepped and is particularly adapted for fabricating a potassium nitrate ferroelectric memory on a semiconductor integrated circuit.

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patent: 3508213 (1970-04-01), Hastings
patent: 3611558 (1971-10-01), Carbonel
patent: 3623030 (1971-11-01), Sawyer
patent: 3728694 (1973-04-01), Rohrer
patent: 3864817 (1975-02-01), Lapham, Jr. et al.
patent: 3886582 (1975-05-01), Kobayashi
patent: 3939292 (1976-02-01), Rohrer

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