Metal working – Electric condenser making – Solid dielectric type
Patent
1978-02-13
1979-04-17
Larson, Lowell A.
Metal working
Electric condenser making
Solid dielectric type
29604, 29628, 357 51, H01G 700
Patent
active
041493010
ABSTRACT:
A monolithic semiconductor integrated circuit - ferroelectric device is disclosed together with the method of manufacturing same. The ferroelectric device preferably consists of a layer of stable ferroelectric potassium nitrate disposed between electrical contacts positioned on opposite surfaces of the ferroelectric layer. The ferroelectric layer has a thickness of less than 110 microns, and preferably falling within a range of from 100 Angstrom units to 5,000 Angstrom units. The process of manufacturing the monolithic structure is multi-stepped and is particularly adapted for fabricating a potassium nitrate ferroelectric memory on a semiconductor integrated circuit.
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patent: 3365631 (1968-01-01), Delaney et al.
patent: 3405440 (1968-10-01), Nolta et al.
patent: 3508213 (1970-04-01), Hastings
patent: 3611558 (1971-10-01), Carbonel
patent: 3623030 (1971-11-01), Sawyer
patent: 3728694 (1973-04-01), Rohrer
patent: 3864817 (1975-02-01), Lapham, Jr. et al.
patent: 3886582 (1975-05-01), Kobayashi
patent: 3939292 (1976-02-01), Rohrer
Ferrosil Corporation
Larson Lowell A.
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