Monolithic semiconductor integrated circuit device having curren

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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328167, 307270, 381 98, H03K 500, H03B 100

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050536508

ABSTRACT:
A monolithic semiconductor integrated circuit device includes a differentially operative circuit section, an amplifying element connected to define a current flowing in the differentially operative circuit section and a circuit for adjusting a current flowing in the amplifying element to thereby compensate for variations of electric characteristics from one semiconductor device to another. The current adjusting circuit includes at least one amplifying element and a load resistance for the amplifying element in the current adjusting circuit. The load resistance has a structure suitable for a trimming operation to adjustably determine the resistance value of the load resistance. The amplifying elements are in a current mirror circuit connection with their control electrodes being concerned with each other so that the electric current flowing in the current path between the current receiving and delivering electrodes of the amplifying element connected to define the current flowing in the differentially operative circuit section is controlled by the adjustably determined resistance of the load resistance.

REFERENCES:
patent: 4374335 (1983-02-01), Fukahori et al.
patent: 4818903 (1989-04-01), Kawano
patent: 4849663 (1989-07-01), Kunze et al.
patent: 4851719 (1989-07-01), Hitomi
patent: 4859881 (1989-08-01), Yamamoto et al.
patent: 4888502 (1989-12-01), Jarrett
Practical Electronic Circuit Handbook (2), Oct. 20, 1975, CQ Publishing Co., Ltd., pp. 281-289.

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