Monolithic semiconductor integrated a.c. switch circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307270, 307288, 307313, 307254, H03K 1760, H03K 326

Patent

active

046330950

ABSTRACT:
A monolithic bipolar semiconductor integrated switch circuit which does not require a high breakdown voltage construction or a biased substrate comprises a first terminal connected to a transmission line for transmitting a signal containing an a.c. signal, a second terminal connected to a reference potential point, a first transistor having an emitter connected to the first terminal, a second transistor having an emitter connected to the second terminal, and a collector connected to the collector of the first transistor. A drive circuit responsive to a control signal supplies at least one conduction signal to the bases of the first and second transistors to control the conductive states thereof. Advantageously, the switch circuit also includes a voltage supply terminal for supplying a voltage to the drive circuit, a unidirectional element for blocking current flow from the first terminal to the voltage supply terminal through the drive circuit, and a separate ground terminal to which a ground line for the drive circuit is connected. The drive circuit advantageously comprises a current mirror circuit which produces first and second constant current conduction signals for controlling the first and second transistors, respectively, and which is responsive to a control signal for activating the current mirror circuit.

REFERENCES:
patent: 3937987 (1976-02-01), Ahmed
patent: 4137428 (1979-01-01), Federico et al.
patent: 4464589 (1984-08-01), Moriyasu et al.

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