Coherent light generators – Particular pumping means – Pumping with optical or radiant energy
Patent
1996-04-25
1999-08-03
Bovernick, Rodney
Coherent light generators
Particular pumping means
Pumping with optical or radiant energy
H01S 3091, H01S 3094
Patent
active
059334444
ABSTRACT:
The invention relates to a device for an infrared light emitter comprising a semiconductor element (12) able to emit infrared radiation and a switched microlaser (2, 4, 6, 8) arranged so as to be able to optically pump the semiconductor element.
REFERENCES:
patent: 4982405 (1991-01-01), Zayhowski et al.
patent: 5048051 (1991-09-01), Zayhowski
patent: 5278855 (1994-01-01), Jacobovitz-Veselka et al.
patent: 5394413 (1995-02-01), Zayhowski
patent: 5495494 (1996-02-01), Molva et al.
patent: 5502737 (1996-03-01), Chartier et al.
Aleksanyan et al; "Swemiconductor laser made of Bi Sb";Sov. J. Quantum Electron. 14(3), Mar. 1984.
IEEE Journal of Quantum Electronics, vol. QE-18, No. 4, Apr. 1982, pp. 511-513, J. Stone, et al., "Tunable InGaAsP Lasers for Spectral Measurements of High Bandwidth Fibers".
Optics Letters, vol. 6, No. 11, Nov. 1981, pp. 534-536, J. Stone, et al., "Optically Pumped Ultrashort Cavity In1-xGaxAsyP1-y Lasers: Picosecond Operation Between 0.83 and 1.59 .mu.m".
Soviet Journal of Quantum Electronics, vol. 14, No. 3, Mar. 1984, pp. 336-338, A. G. Aleksanyan, et al., "Semiconductor Laser Made of Bi1-xSbx".
Optics Letters, vol. 10, No. 5, May 1985, pp. 232-234, C. S. Lee, et al., "Observation of Optical Bistability Due to Resonator Configuration Transition".
Appl. Phys. Lett., vol. 58, No. 4, Jan. 28, 1991, pp. 343-345, Z. Feit, et al., "Single-Mode Molecular Beam Epitaxy Grown PbEuSeTe/PbTe Buried-Heterostructure Diode Lasers for CO2 High-Resolution Spectroscopy".
Appl. Phys. Lett., vol. 55, No. 26, Dec. 25, 1989, pp. 2704-2706, A. Ravid, et al., "Optically Pumped Laser Oscillation at .apprxeq.2.9.mu.m Of A HgCdTe Layer Grown By Metalorganic Chemical Vapor Deposition".
Appl. Phys. Lett., vol. 55, No. 19, Nov. 6, 1989, pp. 2026-2028, N. C. Giles, et al., "Stimulated Emission at 2.8.mu.m From Hg-Based Quantum Well Structures Grown By Photoassisted Molecular Beam Epitaxy".
Journal of Crystal Growth, vol. 117, 1992, pp. 1046-1049, J. Bleuse, et al., "Room-Temperature Laser Emission Near 2 .mu.m From an Optically Pumped HgCdTe Separate-Confinement Heterostructure" No Month.
Optics Communications, vol. 10, No. 1, Jan. 1974, pp. 18-20, K. H. Drexhage, et al., "New Dye Solutions For Mode-Locking Infrared Lasers".
Cleo, 1992, p. 282, A. Eda, et al., "CWG33 Microchip Lasers Fabricated By a Novel Photolithography Technique" No Month.
Optics Letters, vol. 17, No. 17, Sep. 1, 1992, pp. 1201-1203, J. J. Zayhowski, et al., "Diode-Pumped Microchip Lasers Electro-Optically Q Switched At High Pulse Repetition Rates".
IEEE Journal of Quantum Electronics, vol. 24, No. 9, Sep. 1988, pp. 1845-1855, Kenichi Iga, et al., "Surface Emitting Semiconductor Lasers".
Appl. Phys. Lett., vol. 55, No. 1, Jul. 3, 1989, pp. 16-18, Z. Feit, et al., "Low-Threshold PbEuSeTe Double-Heterostructure Lasers Grown By Molecular Beam Epitaxy".
Semicond. Sci. Technol., 1990, pp. S12-S19, H. Preler, "Physics and Applications of IV-VI Compound Semiconductor Lasers" No Month.
Mol. Cryst. Liq. Cryst., 1990, vol. 183, pp. 291-302, U. T. Mueller-Westerhoff, et al., "Near-IR Dyes For the 1.3 to 1.5 Micron Region: The Use of Substituted Dithiolene Complexes" No Month.
Molva Engin
Pautrat Jean-Louis
Bovernick Rodney
Commissariat a l''Energie Atomique
Wise Robert E.
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