Monolithic semiconductor IC device including blocks having diffe

Details Monolithic semiconductor IC device including blocks having diffe Monolithic semiconductor IC device including blocks having diffe

1988-10-05

1992-06-09

Hille, Rolf

357 40, 357 43, 357 34, 357 35, H01L 2702

Patent

active

051211858

ABSTRACT:
A monolithic semiconductor integrated circuit device includes bipolar transistors and MOS transistors constituting plural blocks formed in a single semiconductor substrate and capable of performing different functions. The bipolar transistors in the blocks have different breakdown voltages and different operation speeds due to the selection of different resistances of their collector regions.

REFERENCES:
patent: 4437171 (1984-03-01), Hudson et al.
patent: 4589004 (1986-05-01), Yasuda et al.
patent: 4806499 (1989-02-01), Shinohara
patent: 4825274 (1989-04-01), Higuchi et al.
patent: 4825275 (1989-04-01), Tomassetti
"Process Techniques . . . Chip", IBM Technical Disclosure Bulletin, vol. 30, No. 8, Jan. 1988.
Castrucci et al., "Bipolar . . . Circuit", IBM Technical Disclosure Bulletin, vol. 16, No. 8, Jan. 1974.

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