Monolithic semiconductor device having an edge structure and met

Details Monolithic semiconductor device having an edge structure and met Monolithic semiconductor device having an edge structure and met

1996-12-03

1998-11-03

Dutton, Brian

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having structure increasing breakdown voltage

438275, H01L 21332, H01L 218236

Patent

active

058307834

ABSTRACT:
A monolithic semiconductor device having an edge structure that facilitates integrating high power devices an logic devices on the same substrate. The semiconductor device includes on a substrate of a first type of doping, a control region of a second type of doping, which is provided with an edge region, and a power region of a second type of doping. In the edge region, at least one channel is provided which is adapted to divide the edge region into regions that are electrically isolated from each other, the region at the channel being covered with a field plate. A method for producing such an edge structure in combination with the production execution of the monolithic device is also disclosed herein.

REFERENCES:
patent: 5168340 (1992-12-01), Nishimura
patent: 5446300 (1995-08-01), Amato et al.
patent: 5567968 (1996-10-01), Tsuruta et al.

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