Monolithic semiconductor device having a vertical structure with

Details Monolithic semiconductor device having a vertical structure with Monolithic semiconductor device having a vertical structure with

1992-11-25

1995-04-18

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

257164, 257582, 257591, H01L 2972

Patent

active

054081246

ABSTRACT:
A finger-emitter power transistor including a substrate suitable for operating as the collector of the power transistor, an epitaxial layer superimposed over the substrate (and providing a base region for the transistor), and at least one buried emitter region (for each finger of the device) below the surface of the epitaxial layer. Each buried emitter region is provided with at least one connection area to an emitter surface metallization. The connection areas between the emitter regions and their emitter surface metallization are made in various widths to provide a ballast resistance of an adequate value.

REFERENCES:
patent: 4072979 (1978-02-01), Palara
patent: 4506208 (1985-03-01), Merrill
patent: 4769688 (1988-09-01), Cotton

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