Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal
Patent
1997-07-16
1998-09-15
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Responsive to non-optical, non-electrical signal
257415, 257417, 257420, 7351421, 7351422, 7351436, H01L 2982
Patent
active
058083316
ABSTRACT:
A semiconductor device (15) having a sensor (11) and a transistor (10) formed on a monolithic semiconductor substrate (16). The sensor (11) has a source region (41), a drain region (42), and a microstructure (12) which is formed from a conductive layer (28). The microstructure (12) modulates a channel region between the source and drain regions (41,42). The transistor has a gate structure, a portion of which is formed from the same conductive layer (28) used to form the microstructure (12). Anneal steps are performed on the conductive layer (28) to remove stress prior to the formation of source and drain regions (34,36) of the transistor (10). A self-test structure (14) is formed adjacent to the microstructure (12) which is used to calibrate and verify the operation of the sensor (11).
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Gutteridge Ronald J.
Joseph Eric D.
Kar Barun K.
Li Guang X.
Zhang Zuoying L.
Collopy Daniel R.
Mintel William
Motorola Inc.
Seddon Kenneth M.
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