Monolithic red/ir side by side laser fabricated from a stacked d

Coherent light generators – Particular active media – Semiconductor

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372 46, 372 23, H01S 319

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05999553&

ABSTRACT:
A monolithic laser structure has an infrared laser structure stacked on top of a red laser structure. An ion implantation channel from the substrate of the infrared laser structure to the lower cladding layer of the red laser structure lets both laser structures use a common electrode on the substrate of the red laser structure. A portion of the monolithic structure is etched down to the red laser structure for the electrode of the red laser structure. The monolithic laser structure has a red and infrared side by side array from the two stacked red and infrared laser structures. The red and infrared laser structures can each have native oxide confined ridge waveguides.

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J. S. Major et al., "Individually Addressable, High Power Singlemode Laser Diodes at 0.8, 0.85 and 0.92 .mu.m", Electronics Letters, vol. 28, No. 4, Feb. 13, 1992, pp. 391-393.

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