Monolithic programmable attenuator

Amplifiers – Signal feedback – Combined with control of bias voltage of signal amplifier

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357 231, 357 2314, 357 51, 330253, 330286, 437 8, H01L 2950, H01L 2952

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046849653

ABSTRACT:
A programmable attenuator includes a plurality of field effect transistors (FETS) arranged together to provide an attenuation network. Each one of the FETS has a plurality of cell portions, each cell portion having drain, gate and source regions, the source and drain regions of the cell portions being connected in parallel. A first selected portion of the gate regions of each one of said FETS is connected to a gate electrode. A second selected remaining portion of the gate regions of each one of the FETS has the gate regions thereof isolated from the gate electrode. A signal fed to the gate electrode of each FET is distributed to the connected gate regions of each field effect transistor. In response to such signal, the total drain-source resistance of such FET is changed between a predetermined low value and a predetermined high value, with the resistance of the predetermined high value being determined, in part, by the number of such isolated gate regions.

REFERENCES:
patent: 3828230 (1974-08-01), Nishizawa et al.
patent: 3829883 (1974-08-01), Bate
patent: 3995174 (1976-11-01), Zrudsky
patent: 4182024 (1980-01-01), Cometta
patent: 4216451 (1980-08-01), Nishimura et al.
patent: 4272775 (1981-06-01), Compton et al.
patent: 4298879 (1981-11-01), Hirano
patent: 4430623 (1984-02-01), Bert et al.
Sze Physics of Semiconductor Devices Wiley N.Y. 1981, pp 314-316.

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