Monolithic programmable attenuator

Details Monolithic programmable attenuator Monolithic programmable attenuator

1987-02-17

1988-11-29

Zazworsky, John

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307550, 333 81R, H03K 508, H03H 1124

Patent

active

047876867

ABSTRACT:
A programmable attenuator includes a plurality of field effect transistors (FETS) arranged together to provide an attenuation network. Each one of the FETS has a plurality of cell portions, each cell portion having drain, gate and source regions, the source and drain regions of the cell portions being connected in parallel. A first selected portion of the gate regions of each one of said FETS is connected to a gate electrode. A second selected remaining portion of the gate regions of each one of the FETS has the gate regions thereof physically isolated from the gate electrode. A signal fed to the gate electrode of each FET is distributed to the connected gate regions of each field effect transistor. In response to such signal, the total drain-source resistance of such FET is changed between a predetermined low value and a predetermined high value, with the resistance of the predetermined high value being determined, in part, by the number of such isolated gate regions.

REFERENCES:
patent: 3621284 (1971-11-01), Cluett et al.

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