Monolithic pressure sensitive integrated circuit

Details Monolithic pressure sensitive integrated circuit Monolithic pressure sensitive integrated circuit

1988-05-02

1989-12-05

James, Andrew J.

357 40, 357 51, 357 55, 73727, H01L 2984, H01L 2996

Patent

active

048856215

ABSTRACT:
A monolithic pressure sensitive silicon integrated circuit is formed by first providing a localized etch-stop layer on one surface of the silicon chip, then growing successive epitaxial layers of opposite conductivity types over this surface. In the upper of the two layers, there is formed a bridge of four piezoresistors overlying the periphery of the etch-stop layer and the conditioning circuitry for amplifying the output of the bridge including both lateral and vertical junction transistors. The back surface of the chip is etched anisotropically to form a cavity that leaves a thin diaphragm underlying the bridge of the four piezoresistors.

REFERENCES:
patent: 3858150 (1974-12-01), Gurtler et al.
patent: 3994009 (1976-11-01), Hartlaub
patent: 4003127 (1977-01-01), Jaffe et al.
patent: 4033787 (1977-07-01), Marshall
patent: 4332000 (1982-05-01), Petersen
patent: 4372803 (1983-02-01), Gigante
patent: 4456901 (1984-06-01), Kurtz et al.
patent: 4618397 (1986-10-01), Shimizu et al.
patent: 4672411 (1987-06-01), Shimuzu et al.
A. Bohg, "Ethylene Diamene-Pyrocathechol-Water Mixture Shows Etching Anomaly in Boron-Disposed Silicon," J. Electrochem. Soc.: Electrochemical Technology, v 18, n 2, pp. 401-402 (Feb. 1971).
J. C. Greenwood, "Ethylene Diamene-Cathechol-Water Mixture Shows Preferential Etching of p-n Junction," J. Electrochem. Soc.: Electrochemical Technology, v 116, n 9, pp. 1325-1326 (Sep. 1969).
J. A. Oakes, "A Pressure Sensor for Automotive Application," Proceedings of the Third International Conference on Automotive Electronics, pp. 143-9, Oct. 20-23, 1981, London, England, sponsored by the Institute for Mechanical Engineers.

Affiliated with

Also associated with

Rating

Monolithic pressure sensitive integrated circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Monolithic pressure sensitive integrated circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Monolithic pressure sensitive integrated circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2037531