Monolithic pressure sensitive integrated circuit

Fishing – trapping – and vermin destroying

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437 31, 437 32, 437901, 73727, H01L 2170, H01L 21265

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active

049771019

ABSTRACT:
A monolithic pressure sensitive silicon integrated circuit is formed by first providing a localized etch-stop layer on one surface of the silicon chip, then growing successive epitaxial layers of opposite conductivity types over this surface. In the upper of the two layers, there is formed a bridge of four piezoresistors overlying the periphery of the etch-stop layer and the conditioning circuitry for amplifying the output of the bridge including both lateral and vertical junction transistors. The back surface of the chip is etched anisotropically to form a cavity that leaves a thin diaphragm underlying the bridge of the four piezoresistors.

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A. Bohg, "Ethylene Diamene-Pyrocatechol-Water Mixture Shows Etching Anomaly in Boron-Doped Silicon," J. Electrochem. Soc.: Electrochemical Technology, vol. 18, No. 2, pp. 401-402 (Feb. 1971).
J. C. Grenwood, "Ethylene Diamene-Catechol-Water Mixture Shows Preferential Etching of p-n Junction", J. Electrochem Soc.: Electrochemical Technology, vol. 116, No. 9, pp. 1325-1326 (Sep. 1969).
J. A. Oakes, "A Pressure Sensor for Automotive Application," Proceedings of the Third International Conference on Automotive Electronics, pp. 143-149, 20-23 Oct. 1981, London, England, sponsored by the Institute for Mechanical Engineers.

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