Monolithic power monitor and wavelength detector

Details Monolithic power monitor and wavelength detector Monolithic power monitor and wavelength detector

2008-02-05

2011-12-13

Tran, Dzung (Department: 2613)

Optical communications

Receiver

C398S138000, C398S207000

Reexamination Certificate

active

08078063

ABSTRACT:
Monolithic single and/or dual detector structures are fabricated on the emitting surface of a VCSEL and/or on a lens or glass substrate configured to be positioned along the axis of emission of an optical light source. Each monolithic detector structure includes one or two PIN detectors fabricated from amorphous silicon germanium with carbon doping or amorphous germanium with hydrogen doping. The monolithic detectors may additionally include various metallization layers, buffer layers, and/or anti-reflective coatings. The monolithic detectors can be grown on 1550 NM VCSELs used in optical transmitters, including lasers with managed chirp and TOSA modules, to reduce power and real estate requirements of the optical transmitters, enabling the optical transmitters to be implemented in long-reach SFP+ transceivers.

REFERENCES:
patent: 4863820 (1989-09-01), Osawa
patent: 6027975 (2000-02-01), Hergenrother et al.
patent: 6037644 (2000-03-01), Daghighian
patent: 2004/0101009 (2004-05-01), Johnson et al.
patent: 2005/0046868 (2005-03-01), Kim et al.
patent: 2007/0172169 (2007-07-01), Kish et al.
patent: 2008/0089693 (2008-04-01), El-Ahmadi et al.
patent: 2008/0267633 (2008-10-01), Weem et al.
patent: 2008/0292311 (2008-11-01), Daghighian et al.
patent: 2009/0016740 (2009-01-01), Mahgerefteh et al.
D.R. Cote et al, “Low-temperature chemical vapor deposition processes and dielectrics for microelectronic circuit manufacturing at IBM” IBM J. Res. Develop. vol. 39 No. 4 Jul. 1995 pp. 437-464.
J. Humlicek, “Optical spectroscopy of SiGe” Properties of Strained and Relaxed Silicon Germanium (INSPEC, IEE, 1995) pp. 244-267.
M. Jutzi and M. Berroth, “SiGe-based photodetectors for optical communication applications” May 1999, pp. 342-348.
D. Kruangam et al, “Amorphous photocoupler consisting of a-SiC:H thin film light emitting diode and a-SiGe:H thin film photodiode” Journal of Non-Crystalline Solids 266-269 (2000) pp. 1241-1246.
Donald R. Larson et al, “Hydrogenated amorphous germanium detectors deposited onto channel waveguides”, National Institute of Standards and Technology, Dec. 8, 1989 pp. 544-546.
Tadatsugu Minami, “Transparent conducting oxide semiconductors for transparent electrodes” Institute of Physics Publishing, Semicond. Sci. Technol 20 (2005) S535-S44.
Stefan Rapp, “Long-Wavelength Vertical-Cavity Lasers Based on InP/GaInAsp Bragg Reflectors”, Royal Institute of Technology, Stockholm 1999.
Sean G. Reidy et al, “Electrical properties ofpnjunctions formed by plasma enhanced epitaxial growth”, Journal of Applied Physics, vol. 91, No. 5, Mar. 1, 2002.
Wilfried G.J.H.M. Van Sark, “Methods of Deposition of Hydrogenated Amorphous Silicon for Device Applications”, Debye Institute, The Netherlands.
Xiaoping Shao et al, “1.3 μm photoresponsivity in Si-based Ge1-xCxphotodiodes” Applied Physics Letters vol. 72, No. 15, Apr. 13, 1998 pp. 1860-1862.
R.F. Wolffenbuttel, “Silicon Photodetectors with a Selective Spectral Response” Delft University of Technology, The Netherlands.

Affiliated with

Also associated with

Rating

Monolithic power monitor and wavelength detector does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Monolithic power monitor and wavelength detector, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Monolithic power monitor and wavelength detector will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4307120