Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2010-02-12
2011-11-08
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S184000, C257S187000, C257S257000, C257S291000, C257S436000, C257SE31083
Reexamination Certificate
active
08053801
ABSTRACT:
A photodetector including a photodiode formed in a semiconductor substrate and a waveguide element formed of a block of a high-index material extending above the photodiode in a thick layer of a dielectric superposed to the substrate, the thick layer being at least as a majority formed of silicon oxide and the block being formed of a polymer of the general formula R1R2R3SiOSiR1R2R3where R1, R2, and R3are any carbonaceous or metal substituents and where one of R1, R2, or R3is a carbonaceous substituent having at least four carbon atoms and/or at least one oxygen atom.
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Aumont Christophe
Fellous Cyril
Hotellier Nicolas
Roy Francois
Graybeal Jackson LLP
Jablonski Kevin D.
Jorgenson Lisa A.
Louie Wai-Sing
STMicroelectronics SA
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