Monolithic parallel connected transistor structure

Details Monolithic parallel connected transistor structure Monolithic parallel connected transistor structure

1991-06-03

1993-02-09

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257280, 257287, 257523, H01L 2980

Patent

active

051855348

ABSTRACT:
At least two unit transistor groups, each including unit transistors arranged along a straight line, are disposed on a substrate parallel to and facing each other. Each transistor in one group and a facing transistor in the other group have integral first, second, and control electrodes. The first, second, and control electrodes of the unit transistors are connected to associated respective electrode pads.

REFERENCES:
patent: 3737743 (1973-06-01), Goronkin et al.
patent: 4313126 (1982-01-01), Krumm et al.
patent: 4996582 (1991-02-01), Nagahama
patent: 5023677 (1991-06-01), Truitt
patent: 5025296 (1991-06-01), Fullerton et al.
patent: 5084750 (1992-01-01), Adlerstein
Itoh et al, "Fabrication Of Super Low Noise HEMT . . . Characteristics", Research Reports Of The Institute Of Electronics And Communication Engineers Of Japan, vol. 88, No. 60, 1988 (May).
Bastida et al, "Airbridge Gate FET For GaAs Monolithic Circuits" IEEE Transactions On Electron Devices, vol. Ed-32, No. 12, 1985, pp. 2754-2759.

Affiliated with

Also associated with

Rating

Monolithic parallel connected transistor structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Monolithic parallel connected transistor structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Monolithic parallel connected transistor structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-327094