Monolithic nuclear event detector and method of manufacture

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to corpuscular radiation

Reexamination Certificate

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Details

C438S133000, C257SE21700, C257SE27112

Reexamination Certificate

active

07858425

ABSTRACT:
A PIN diode-based monolithic Nuclear Event Detector and method of manufacturing same for use in detecting a desired level of gamma radiation, in which a PIN diode is integrated with signal processing circuitry, for example CMOS circuitry, in a single thin-film Silicon On Insulator (SOI) chip. The PIN diode is implemented in the p-substrate layer. The signal processing circuitry is located in a thin semiconductor layer and is in electrical communication with the PIN diode. The PIN diode may be integrated with the signal processing circuitry onto a single chip, or may be fabricated stand alone using SOI methods according to the method of the invention.

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