Monolithic multiple beam semiconductor laser

Details Monolithic multiple beam semiconductor laser Monolithic multiple beam semiconductor laser

1989-09-25

1991-04-30

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

437129, 375 49, H01S 319

Patent

active

050124781

ABSTRACT:
A monolithic multiple beam semiconductor laser having a low power and a high power beam. A number of factors in the laser are coordinated in order to assure that both the low and high power beams operate at precisely the same frequency. The front and rear facet reflectances of the respective low and high power cavities are coordinated to each other and to the rated operating power levels of the respective lasers to achieve the same operating frequency from both beams. In a particular example, the low power cavity has front and rear facet reflectivities of 30% and a rated output power of 3 mw. The high power cavity has a rated operating power of 20 mw, a front facet reflectivity of 2%, and a rear facet reflectivity of 60%.

REFERENCES:
patent: 4147409 (1979-03-01), Apfel
patent: 4852112 (1989-07-01), Kagawa et al.
patent: 4855256 (1989-08-01), Kabayashi et al.
patent: 4891816 (1990-01-01), Yoshida et al.
patent: 4899359 (1990-02-01), Yano et al.
"A New Monolithic Dual GaAlAs Laser Array for Read/Write Optical Disk Applications", Kume et al., IEEE Journal of Quantum Electronics, vol. QE23, No. 6, Jun. 1987, pp. 898-901.

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