Patent
1988-10-25
1990-05-08
Edlow, Martin H.
357 45, 357 49, H01L 2714
Patent
active
049242857
ABSTRACT:
An integrated, planar, single-channel, photodetector-amplifier device is disclosed. The single-channel device includes a photodetector layer and an amplifier layer above the photodetector layer. The photodetector layer is low-doped to give a low dark current and is sufficiently thick to give a high quantum efficiency. The amplifier layer is of a smaller thickness and is a more highly doped material than the photodetector layer, to provide an amplifier having high gain. An insulating layer is included between the photodetector and amplifier layers for electrically isolating the photodetector and amplifier layers. The layers are fabricated on a substrate. Isolation regions are also included for electrically laterally isolating a photodetector, amplifier, and other circuit components comprising the single channel device from each other.
An integrated multi-channel photodetector-amplifier array is also disclosed which array comprises a plurality of single-channel photodetector-amplifier devices fabricated on the same substrate with isolation regions created by proton bombardment to electrically laterally isolate the individual circuit channels from each other. The photodetector-amplifier array may be a linear or an area array.
REFERENCES:
patent: 3881113 (1985-03-01), Rideout et al.
patent: 4363963 (1982-12-01), Ando
patent: 4381517 (1978-01-01), Harada
patent: 4745449 (1981-11-01), Chang et al.
M. Makiuchi et al., A Monolithic Four-Channel Photoreceiver Integrated on a aAs Substrate Using Metal-Semiconductor Metal Photodiodes and FET's, IEEE Electron Device Letters, vol. EDL-6, No. 12, Ded. 1985.
Lam et al., Monolithic Integration of GaAs Photoconductors with a Field-Effect Transistor, Electronics Letters, vol. 22, No. 14, p. 753, Jul. 3, 1986.
G. Borsuk et al., Photodetectors for Acousto-Optic Signal Processing, SPIE vol. 639, 1986.
Anderson Gordon W.
Boos John B.
Dietrich Harry B.
Ma David I.
Mack Ingham A. G.
Edlow Martin H.
McDonnell Thomas E.
Rutkowski Peter T.
The United States of America as represented by the Secretary of
LandOfFree
Monolithic multichannel detector amplifier arrays and circuit ch does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Monolithic multichannel detector amplifier arrays and circuit ch, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Monolithic multichannel detector amplifier arrays and circuit ch will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2352932