Monolithic multi-junction solar cells with amorphous silicon and

Details Monolithic multi-junction solar cells with amorphous silicon and Monolithic multi-junction solar cells with amorphous silicon and

1997-07-28

2000-09-19

Robinson, Ellis

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136258, 136262, 136264, 136249, 257184, H01L 310376, H01L 310392, H01L 310272

Patent

active

061215414

ABSTRACT:
Efficient broader spectrum monolithic solar cells are produced by coupling a CIS or CIGS polycrystalline semiconductor to an amorphous silicon semiconductor. Coupling can be accomplished with a n-type conductor, such as cadmium sulfide or microcrystalline n-doped amorphous silicon. Cadmium sulfide can be deposited on the CIS or CIGS polycrystalline semiconductor by solution growth, sputtering or evaporation. A transparent conductive oxide can be deposited on the cadmium sulfide by low pressure chemical vapor deposition. The microcrystalline n-doped amorphous silicon and the amorphous silicon semiconductor can be deposited by enhanced plasma chemical vapor deposition. The amorphous silicon can comprise: hydrogenated amorphous silicon, hydrogenated amorphous silicon carbon, or hydrogenated amorphous silicon germanium. Triple junction solar cells can be produced with an amorphous silicon front cell, an amorphous silicon germanium middle cell, and a CIS or CIGS polycrystalline back cell, on a substrate.

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