Thermal measuring and testing – Temperature measurement – In spaced noncontact relationship to specimen
Patent
1990-10-09
1994-12-06
Cain, David C.
Thermal measuring and testing
Temperature measurement
In spaced noncontact relationship to specimen
338 9, 338 20, 338308, 338 27R, 324106, 257467, 257528, H01L 2966
Patent
active
053704584
ABSTRACT:
A monolithic integrated circuit power sensor provides a monolithic integrated circuit substrate a conversion element formed either on or in the substrate for converting microwave energy into heat, an electrically insulating dielectric layer affixed to the conversion element, and an integrated circuit, heat sensitive element formed in sufficiently close proximity to the conversion element to be thermally coupled thereto through the dielectric layer for sensing temperature changes in the conversion element.
REFERENCES:
patent: 3862017 (1975-01-01), Tsunemitsu et al.
patent: 4044371 (1977-08-01), Abdelrahman et al.
patent: 4065742 (1977-12-01), Kendall et al.
patent: 4099071 (1978-07-01), Thornburg
patent: 4489104 (1984-12-01), Lee
patent: 4498071 (1984-02-01), Plough, Jr. et al.
patent: 4609903 (1986-09-01), Toyokura et al.
patent: 4673531 (1987-06-01), Lee
patent: 4789823 (1988-12-01), Delfs et al.
Gupth, J. P. and Sachdev, R. N. "A Microwave Radiation Monitor," Journal of Applied Meterology, vol. 15, No. 9, pp. 1023-1026, Sep. 76.
DC to 40 GHz MMIC Power Sensor, Oct. 7, 1990, 1990 IEEE GaAs IC Symposium.
Cain David C.
Gomes David W.
Lockheed Sanders, Inc.
LandOfFree
Monolithic microwave power sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Monolithic microwave power sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Monolithic microwave power sensor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-210198