Monolithic microwave integrated circuit terminal protection devi

Electricity: electrical systems and devices – Safety and protection of systems and devices – Transient responsive

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361 56, 361120, 361129, 313595, 313603, 313308, H02H 906

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active

048917303

ABSTRACT:
A monolithic microwave integrated circuit is enclosed within an ionizable gas filled housing having a terminal protection device integral with the circuit's substrate. A photon generating region extends within the substrate and along a portion of the surface area of the substrate for facilitating the ionizing of the gas. First and second electrodes, in contact with the substrate surface area and disposed on opposite sides of the photon generating region, have a plurality of cantilevered protrusions extending over the surface of the substrate and equally spaced from one another forming spark-gaps therebetween. One electrode is connected to an input to the device while the other is connected to ground. When a potential difference between the first and second electrodes increases towards a predetermined value, due to high RF input energy, the photon generating region is operatively biased to emit photons, which ionize the gas, resulting in a voltage discharge across the spark-gaps to occur quickly and at a lower voltage than the semiconductor breakdown voltage.

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patent: 3748522 (1973-07-01), Geppert
patent: 4054813 (1977-10-01), Agnoux et al.
patent: 4096541 (1978-06-01), Bohin et al.
patent: 4277812 (1981-07-01), Jones
patent: 4438365 (1984-03-01), Atkinson
Sze, Physics of Semiconductor Devices, 2nd ed., 1981, John Wiley & Sons, pter 12, 681-724.

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