Monolithic microwave diodes

Wave transmission lines and networks – Automatically controlled systems – With control of equalizer and/or delay network

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357 51, 357 81, 333 35, 333247, 331107R, H01L 2990, H01L 2713, H01L 2350, H01L 2334

Patent

active

046739580

ABSTRACT:
Two-terminal active devices, such as IMPATT and Gunn diodes, are combined with passive devices in a monolithic form using a plated metal heat sink to support the active elements and a coated-on dielectric to support the passive elements. Impedance-matching circuitry is preferably placed very close to (or partially overlapping) the active device, thereby eliminating detrimental device-to-circuit transition losses.

REFERENCES:
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patent: 4152718 (1979-05-01), Cachier
patent: 4200880 (1980-04-01), Frey
patent: 4283734 (1981-08-01), Espaignol
patent: 4302734 (1981-11-01), Stockton et al.
patent: 4319265 (1982-03-01), Rosen et al.
patent: 4331942 (1982-05-01), Matsunaga et al.
patent: 4374394 (1983-02-01), Camisa
patent: 4376287 (1983-03-01), Sechi
patent: 4544989 (1985-10-01), Makabu et al.
Cachier et al., IEEE Transactions on Microwave Theory and Techniques, vol. MTT-27, No. 5, May 1979 pp. 505-510.
Heitzmann, IEEE Transactions on Electron Devices, vol. ED-30 No. 7, Jul. 1983, pp. 759-763.
Caulton, "The Lumped Element Approach to Microwave Integrated Circuits" The Microwave Journal May 1970, pp. 51-58.
Pengelly "Microwave Field-Effect Transistors--Theory, Design and Applications" Copyright 1982 pp. 381-399.
Sokolov et al., 1979 IEEE MTT-S International Microwave Symposium Digest, Orlando, FL. USA pp. 489-491.

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