1988-04-07
1991-01-08
James, Andrew J.
357 52, 357 47, H01L 3300
Patent
active
049840355
ABSTRACT:
A monolithic light emitting diode array includes: at least one mixed crystal layer formed on a substrate by an epitaxial growth to provide a P-N junction at the boundary surface thereof; row of a plurality of light emitting diode portions each having the P-N junction; at least one forward mesa etching groove provided along the row of a plurality of light emitting diode portions on the at least one mixed crystal layer; a plurality of reverse mesa etching grooves provided so to be orthogonal to the at least one forward mesa etching groove and positioned between the plurality of light emitting diode portions on the at least one mixed crystal layer; a plurality of individual electrodes having electrode portions extending respectively to the plurality of light emitting diode portions so as to cross the at least one forward mesa etching groove, and a common electrode provided on a back surface of said substrate. Each of the emitting diode portions is surrounded by the forward and reverse mesa etching grooves so that the manufacturing thereof becomes easier and the characteristic thereof is improved.
REFERENCES:
patent: 3887404 (1975-06-01), Chane 357 60
Schnable, G., et al., "Passivation Coatings on Silicon Devices", J. Electrochem. Soc.; Solid State Science and Technology, Aug., 1975, pp. 1092-1103.
Surridge, R. K. et al., "Planar GaAs Mott Low Noise . . . ", Proc. of 11th Eur. Microwave Conf., Sep., 1981, pp. 871-875.
Ghandhi, S. K. VLSI Fabrication Principles, John Wiley, 1983, pp. 424-427.
Kanzawa Ryosaku
Kurata Kazuhiro
Sano Hisumi
Takahashi Ken
Crane Sara W.
Hitachi Cable Ltd.
James Andrew J.
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