Monolithic light-emitting diode and modulator

Details Monolithic light-emitting diode and modulator Monolithic light-emitting diode and modulator

1974-09-19

1976-08-17

Edlow, Martin H.

357 17, 357 55, H01L 3112, H01L 3116

Patent

active

039757510

ABSTRACT:
For a reversed bias double heterostructure diodes, particularly GaAs diodes, electroabsorption can be obtained with reverse bias and light emission can be obtained with forward bias. However bulk absorption is large at wavelengths close to the band edge, where light emission occurs. Thus light emission through a modulator at zero bias is low. By providing for the light emulsion to be at a larger wavelength than that corresponding to the band edge high modulation efficiencies can be obtained. This is achieved by suitably doping the emitter differently as compared with the modulator so that light emission occurs at wavelengths greater than that at the fundamental energy gap.

REFERENCES:
patent: 3458703 (1969-07-01), Migitaka
patent: 3617929 (1971-11-01), Strack
patent: 3723903 (1973-03-01), Paoli
patent: 3724926 (1971-08-01), Lee
patent: 3768037 (1973-10-01), Migitaka
patent: 3828231 (1974-08-01), Yamamoto

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