Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-10-17
2006-10-17
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S014000, C257S022000
Reexamination Certificate
active
07122827
ABSTRACT:
The present invention is directed toward a method for fabricating low-defect nanostructures of wide bandgap materials and to optoelectronic devices, such as light emitting sources and lasers, based on them. The invention utilizes nanolithographically-defined templates to form nanostructures of wide bandgap materials that are energetically unfavorable for dislocation formation. In particular, this invention provides a method for the fabrication of phosphor-less monolithic white light emitting diodes and laser diodes that can be used for general illumination and other applications.
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Alizadeh Azar
Conway Kenneth Roger
D'Evelyn Mark Philip
Ganti Suryaprakash
LeBoeuf Steven Francis
General Electric Company
Mickelson Edward T.
Vu Hung
Winstead Sechrest & Minick
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