Monolithic lateral S.C.R. having reduced "on" resistance

Details Monolithic lateral S.C.R. having reduced "on" resistance Monolithic lateral S.C.R. having reduced "on" resistance

1975-08-06

1976-07-27

James, Andrew J.

357 20, 357 48, H01L 2974

Patent

active

039720616

ABSTRACT:
In a monolithic lateral silicon controlled rectifier structure suitable for integrated circuit application, laterally spaced P type conductivity regions are embedded in an epitaxial N type layer for defining lateral anode and cathode regions thereof. A subcollector layer of N+ conductivity is disposed underlying the anode, cathode and gate regions of the lateral semi-conductive structure. The anode region includes a P+ dependent zone extending down through the N type conductivity region to the N+ subcollector layer for reducing the "on" resistance of the silicon controlled rectifier structure. In addition, the N+ subcollector region is preferably a heavily doped region for further reduction of series resistance.

REFERENCES:
patent: 3667006 (1972-05-01), Ruegg
patent: 3725683 (1973-04-01), Andersen

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