Monolithic integration of silicon on insulator and gallium arsen

Details Monolithic integration of silicon on insulator and gallium arsen Monolithic integration of silicon on insulator and gallium arsen

1989-06-14

1992-01-14

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 21, 357 16, H01L 2120, H01L 21203, H01L 29161, C21D 110

Patent

active

050810626

ABSTRACT:
A semiconductor heterostructure includes separate, device quality regions of gallium arsenide and silicon layers on an insulating substrate such as aluminum oxide or silicon dioxide. The separate regions can be electrically isolated except for intended connections, permitting the fabrication of interrelated gallium arsenide and silicon semiconductor active devices on a single substrate. The device quality gallium arsenide is grown overlying the specially treated device quality silicon layer, by depositing a thin transition layer of gallium arsenide in low temperature growth, annealing it by solid phase epitaxy, and then depositing at a higher temperature a thicker epitaxial layer of gallium arsenide overlying the transition layer.

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