Monolithic integration of optoelectronic and electronic devices

Details Monolithic integration of optoelectronic and electronic devices Monolithic integration of optoelectronic and electronic devices

1989-04-20

1992-04-14

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 59, 437 90, 437133, 437 26, 148DIG72, 148DIG26, H01L 2172

Patent

active

051048230

ABSTRACT:
In the monolithic integration of HFET and DOES device, a wide band gap carrier confining semiconductor layer is provided only at predetermined locations where DOES devices are desired. This layer is not provided at other predetermined locations where HFET devices are desired as it would constitute a shunt path which would degrade the high frequency operation of the HFET devices. The invention is particularly useful where monolithic integration of optical sources, optical detectors, and electronic amplifying or switching elements is desired.

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