Monolithic integration of optoelectronic and electronic devices

Details Monolithic integration of optoelectronic and electronic devices Monolithic integration of optoelectronic and electronic devices

1988-03-31

1989-07-11

James, Andrew J.

Coherent light generators

Particular component circuitry

Optical pumping

357 19, 357 56, 357 55, 357 30, 372 50, 350 9612, H01L 3100

Patent

active

048476650

ABSTRACT:
In the monolithic integration of HFET and DOES devices, a wide band gap carrier confining semiconductor layer is provided only at predetermined locations where DOES devices are desired. This layer is not provided at other predetermined locations where HFET devices are desired as it would constitute a shunt path which would degrade the high frequency operation of the HFET devices. The invention is particularly useful where monolithic integration of optical sources, optical detectors, and electronic amplifying or switching elements is desired.

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