Monolithic integration of complementary transistors and an LED a

Details Monolithic integration of complementary transistors and an LED a Monolithic integration of complementary transistors and an LED a

1996-12-20

1998-08-25

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

257 84, 257 88, H01L 2715, H01L 3112, H01L 3300, H01L 31153

Patent

active

057985359

ABSTRACT:
Monolithic integrated transistors and a light emitting diode matrix epitaxially grown on a semiconductor substrate. The matrix includes a plurality of LEDs organized into rows and columns, the LEDs being formed of layers of semiconductor material epitaxially grown on the substrate. A row driver for each row includes a transistor coupled to the matrix and a column driver for each column includes a complementary transistor coupled to the matrix. The transistor and the complementary transistor are each an HBT including layers of semiconductor material positioned on the semiconductor material forming the matrix.

REFERENCES:
patent: 4006298 (1977-02-01), Fowler et al.
patent: 5550818 (1996-08-01), Brackett et al.
patent: 5679964 (1997-10-01), Kobayashi et al.

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