Monolithic integrated wideband power amplifier

Details Monolithic integrated wideband power amplifier Monolithic integrated wideband power amplifier

1988-10-31

1989-10-03

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including differential amplifier

330257, 330273, 330307, 357 34, 357 36, 357 45, H03F 330, H03F 345, H01L 2972

Patent

active

048719773

ABSTRACT:
A monolithic integrated wideband power amplifier circuit has a push-pull output stage, a driver stage, a difference stage which receives an input voltage signal and provides a difference signal, and the improvement of an operating point setter which receives the difference signal and controls the operating point of the circuit through a settable resistor. The setting of the operating point is independent of the gain of the output stage, and both are independent of temperature. The bipolar NPN transistors of the push-pull output stage consists of parallel-connected subtransistors which are arranged in the integrated circuit layout according to their characteristics and specific use, so as to minimize parasitic capacitances and resistances and to keep the upper cutoff frequency as high as possible.

REFERENCES:
patent: 4451799 (1984-05-01), Fujita
patent: 4652900 (1987-03-01), Hashimoto
IEEE International Solid-State Circuits Conference, 27 (1984) San Francisco, Feb. 22-24, Conference 31, N.Y., U.S.A., W. F. Davis et al.: "A Monolithic P-Channel JFET Quad Operational Amplifier".

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