Patent
1990-02-14
1991-12-10
Hille, Rolf
357 41, 357 40, H01L 2702
Patent
active
050722786
ABSTRACT:
The monolithic integrated structure comprises a semiconductor substrate, a superimposed first epitaxial stratum having characteristics such as to withstand a high supply voltage applied to the driving system and a first and a second isolation pocket which may be connected to a high voltage and to ground, respectively, and diffused in said first epitaxial stratum at a distance such as to define an interposed area of said first stratum capable of isolating said isolating pockets from one another. Within the latter pockets, there are provided respective embedded strata and superimposed regions of a second epitaxial stratum having characteristics such as to withstand the low voltage applied across the two driving stages. A further region of said second epitaxial stratum is superimposed over said area of said first epitaxial stratum. The above regions of isolation pockets are designed for the formation of two high and low voltage driving stages, while the above further region of the second epitaxial stratum may be used for the formation of a level translator circuit component. Means are provided for the protection of said circuit component against high supply voltages.
REFERENCES:
patent: 4742377 (1988-05-01), Einthoven
patent: 4862242 (1989-08-01), Wildi et al.
Palara Sergio
Paparo Mario
Hille Rolf
Potter Ray
SGS--Thomson Microelectronics S.r.l.
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